A Discrete Semiconductor Manufacturer

Silicon Carbide Schottky - SC2S12010B

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Reverse Voltage Vr : 1200 V
  • Forward Current Io : 8.0 A
  • Max Surge Current : 35 A
  • Forward Voltage Vf : 1.8 V
  • Reverse Current Ir : 100 uA
  • Package / Case : TO-247
  • Mounting Style : Through-Hole
  • Notes : Generation 2
  • Typ. Capacitance Charge (nQ) : 59 nQ