A Discrete Semiconductor Manufacturer

MOSFET - RM120N40T2

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 40 V
  • Id @ 25C (A) : 120 A
  • Rds-on (typ) (mOhms) : 3.2 mOhms
  • Total Gate Charge (nQ) typ : 75 nQ
  • Maximum Power Dissipation (W) : 130 W
  • Vgs(th) (typ) : 1.9 V
  • Input Capacitance (Ciss) : 5400 pF
  • Polarity : N-Channel
  • Mounting Style : Through Hole
  • Package / Case : TO-220