A Discrete Semiconductor Manufacturer

MOSFET - RI2N60

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 600 V
  • Id @ 25C (A) : 2.0 A
  • Rds-on (typ) (mOhms) : 4000 mOhms
  • Total Gate Charge (nQ) typ : 3 nQ
  • Maximum Power Dissipation (W) : 45 W
  • Vgs(th) (typ) : 3 V
  • Input Capacitance (Ciss) : 320 pF
  • Polarity : N-Channel
  • Mounting Style : Through Hole
  • Package / Case : TO-251