A Discrete Semiconductor Manufacturer

MOSFET - MDZ1N60

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

Please click "back to search" button to return to your search results.

  • Vdss (V) : 600 V
  • Id @ 25C (A) : 0.4 A
  • Rds-on (typ) (mOhms) : 8500 mOhms
  • Total Gate Charge (nQ) typ : 3.5 nQ
  • Maximum Power Dissipation (W) : 2.5 W
  • Vgs(th) (typ) : 4 V
  • Input Capacitance (Ciss) : 130 pF
  • Polarity : N-Channel
  • Mounting Style : Through Hole
  • Package / Case : TO-92