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You are in MOSFET
Vdss (V)
Id @ 25C (A)
Rds-on (typ) (mOhms)
Total Gate Charge (nQ) typ
Maximum Power Dissipation (W)
Input Capacitance (Ciss)
Polarity
Mounting Style
Package / Case
Search Results ( 159 products found )
  • Item Description
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  • Item Description
  • RM3C20S6 (N)
  • MOSFET - RM3C20S6 (N) rm3c20s6.pdf
  • Search Criteria
    • Part Number : RM3C20S6 (N)
    • Vdss (V) : 20 V
    • Id @ 25C (A) : 3.8 A
    • Rds-on (typ) (mOhms) : 40 mOhms
    • Total Gate Charge (nQ) typ : 5.8 nQ
    • Maximum Power Dissipation (W) : 1.25 W
    • Vgs(th) (typ) : 0.6 V
    • Input Capacitance (Ciss) : 315 pF
    • Polarity : Dual
    • Mounting Style : SMD/SMT
    • Package / Case : SOT23-6
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  • Item Description
  • RM3C20S6 (P)
  • MOSFET - RM3C20S6 (P) rm3c20s6.pdf
  • Search Criteria
    • Part Number : RM3C20S6 (P)
    • Vdss (V) : 20 V
    • Id @ 25C (A) : 2.5 A
    • Rds-on (typ) (mOhms) : 100 mOhms
    • Total Gate Charge (nQ) typ : 4.8 nQ
    • Maximum Power Dissipation (W) : 1.25 W
    • Vgs(th) (typ) : 0.6 V
    • Input Capacitance (Ciss) : 350 pF
    • Polarity : Dual
    • Mounting Style : SMD/SMT
    • Package / Case : SOT23-6
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  • Item Description
  • RM10N40S8
  • MOSFET - RM10N40S8 rm10n40s8.pdf
  • Search Criteria
    • Part Number : RM10N40S8
    • Vdss (V) : 40 V
    • Id @ 25C (A) : 10.0 A
    • Rds-on (typ) (mOhms) : 15 mOhms
    • Total Gate Charge (nQ) typ : 13 nQ
    • Maximum Power Dissipation (W) : 2.1 W
    • Vgs(th) (typ) : 1.8 V
    • Input Capacitance (Ciss) : 1088 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOP-8
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  • Item Description
  • RM1A4N150S6
  • MOSFET - RM1A4N150S6 rm1a4n150s6.pdf
  • Search Criteria
    • Part Number : RM1A4N150S6
    • Vdss (V) : 150 V
    • Id @ 25C (A) : 1.4 A
    • Rds-on (typ) (mOhms) : 480 mOhms
    • Total Gate Charge (nQ) typ : 8.1 nQ
    • Maximum Power Dissipation (W) : 1.56 W
    • Vgs(th) (typ) : 3.0 V
    • Input Capacitance (Ciss) : 350 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT23-6
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  • Item Description
  • RM8A5P60S8
  • MOSFET - RM8A5P60S8 rm8a5p60s8.pdf
  • Search Criteria
    • Part Number : RM8A5P60S8
    • Vdss (V) : 60 V
    • Id @ 25C (A) : 8.5 A
    • Rds-on (typ) (mOhms) : 30 mOhms
    • Total Gate Charge (nQ) typ : 43.8 nQ
    • Maximum Power Dissipation (W) : 4.1 W
    • Vgs(th) (typ) : 1.6 V
    • Input Capacitance (Ciss) : 2595 pF
    • Polarity : P-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOP-8
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  • Item Description
  • RM4N700S4
  • MOSFET - RM4N700S4 rm4n700s4.pdf
  • Search Criteria
    • Part Number : RM4N700S4
    • Vdss (V) : 700 V
    • Id @ 25C (A) : 4.0 A
    • Rds-on (typ) (mOhms) : 1100 mOhms
    • Total Gate Charge (nQ) typ : 8.8 nQ
    • Maximum Power Dissipation (W) : 5.2 W
    • Vgs(th) (typ) : 3.5 V
    • Input Capacitance (Ciss) : 304 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-223-3L
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  • Item Description
  • RM80N30DN
  • MOSFET - RM80N30DN rm80n30dn.pdf
  • Search Criteria
    • Part Number : RM80N30DN
    • Vdss (V) : 30 V
    • Id @ 25C (A) : 80 A
    • Rds-on (typ) (mOhms) : 3.8 mOhms
    • Total Gate Charge (nQ) typ : 24 nQ
    • Maximum Power Dissipation (W) : 66 W
    • Vgs(th) (typ) : 1.6 V
    • Input Capacitance (Ciss) : 2200 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : PPAK3X3
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  • Item Description
  • RM75N60T2
  • MOSFET - RM75N60T2 rm75n60t2.pdf
  • Search Criteria
    • Part Number : RM75N60T2
    • Vdss (V) : 60 V
    • Id @ 25C (A) : 75 A
    • Rds-on (typ) (mOhms) : 9.1 mOhms
    • Total Gate Charge (nQ) typ : 50 nQ
    • Maximum Power Dissipation (W) : 110 W
    • Vgs(th) (typ) : 3.0 V
    • Input Capacitance (Ciss) : 2350 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : TO-220-3L
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  • Item Description
  • RM3134
  • MOSFET - RM3134 rm3134.pdf
  • Search Criteria
    • Part Number : RM3134
    • Vdss (V) : 20 V
    • Id @ 25C (A) : 0.75 A
    • Rds-on (typ) (mOhms) : 270 mOhms
    • Total Gate Charge (nQ) typ : 750 nQ
    • Maximum Power Dissipation (W) : 0.15 W
    • Vgs(th) (typ) : 0.54 V
    • Input Capacitance (Ciss) : 79 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-363
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